Effect of ion dose rate on rapid laser annealing of implanted GaAs

Short-duration laser annealing of localized regions on P ion implanted GaAs wafers has been examined for various doses and dose rates by micro-Raman scattering and Rutherford backscattering measurements. Time required for complete annealing of ion-induced defects varies from 5 ms to 1 s, corresponding to the implanted dose and rate. It is found that the amount of produced defects is enhanced by implantation with higher dose rates and that defects produced with higher dose rates are more easily annealed by the laser irradiation during short durations within a certain dose range.