Barrierless Self-Trapping of Photocarriers in Co3O4

The self-trapping of a free carrier in transition-metal oxides can lead to a small polaron, which is responsible for the inadequate performance of the oxide-based optoelectronic applications. Thus, fundamental understanding of the self-trapping mechanism is of key importance for improving the perfor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:The journal of physical chemistry letters 2021-12, Vol.12 (50), p.12033-12039
Hauptverfasser: Zhang, Yacun, Zhang, Chongjian, Huang, Xiaochun, Yang, Zhangqiang, Zhang, Kelvin H. L, Yang, Ye
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The self-trapping of a free carrier in transition-metal oxides can lead to a small polaron, which is responsible for the inadequate performance of the oxide-based optoelectronic applications. Thus, fundamental understanding of the self-trapping mechanism is of key importance for improving the performance of these applications. Herein, the self-trapping in Co3O4 epitaxial monocrystalline films is investigated primarily by transient absorption spectroscopy. The spectral evolution corresponding to the ultrafast transition from free carriers to small polarons is identified, which allows us to extract the self-trapping kinetics. The relationship between the self-trapping rate and temperature suggests a lack of thermal activation energy. A barrierless self-trapping mechanism derived from the small polaron framework is then proposed, which can successfully describe the observation that self-trapping rate decreases linearly with increasing temperature. Given that small polarons are ubiquitous in transition-metal oxides, this self-trapping mechanism is potentially a general phenomenon in these materials.
ISSN:1948-7185
1948-7185
DOI:10.1021/acs.jpclett.1c03716