Improved control of momentary rapid thermal annealing for silicidation
TiSi sub 2 must undergo a transformation from the high-resistivity C49 to the low-resistivity C54 phase for gate conductor applications. Process modification for improved wafer-to-wafer and within wafer temp. reproducibility is demonstrated.
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| Veröffentlicht in: | Journal of electronic materials 1993-06, Vol.22 (6), p.661-665 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 665 |
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| container_issue | 6 |
| container_start_page | 661 |
| container_title | Journal of electronic materials |
| container_volume | 22 |
| creator | AGNELLO, P. D FINK, A |
| description | TiSi sub 2 must undergo a transformation from the high-resistivity C49 to the low-resistivity C54 phase for gate conductor applications. Process modification for improved wafer-to-wafer and within wafer temp. reproducibility is demonstrated. |
| doi_str_mv | 10.1007/BF02666414 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 1993-06, Vol.22 (6), p.661-665 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_26092009 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Structure of liquids Structure of solids and liquids crystallography Theory and models of liquid structure |
| title | Improved control of momentary rapid thermal annealing for silicidation |
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