Improved control of momentary rapid thermal annealing for silicidation

TiSi sub 2 must undergo a transformation from the high-resistivity C49 to the low-resistivity C54 phase for gate conductor applications. Process modification for improved wafer-to-wafer and within wafer temp. reproducibility is demonstrated.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 1993-06, Vol.22 (6), p.661-665
Hauptverfasser:	AGNELLO, P. D, FINK, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Structure of liquids Structure of solids and liquids crystallography Theory and models of liquid structure
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	TiSi sub 2 must undergo a transformation from the high-resistivity C49 to the low-resistivity C54 phase for gate conductor applications. Process modification for improved wafer-to-wafer and within wafer temp. reproducibility is demonstrated.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/BF02666414