Crystallization of amorphous silicon carbide thin films by laser treatment
Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were crystallized by laser treatment. The samples, with a carbon content in the range 0%–50%, were deposited onto Si (100) wafers by plasma enhanced chemical vapor deposition. Various techniques, such as X-ray photoelectron spectroscopy (XP...
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| Veröffentlicht in: | Surface & coatings technology 1996-03, Vol.80 (1), p.237-241 |
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| container_title | Surface & coatings technology |
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| creator | De Cesare, G. La Monica, S. Maiello, G. Proverbio, E. Ferrari, A. Dinescu, M. Chitica, N. Morjan, I. Andrei, A. |
| description | Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were crystallized by laser treatment. The samples, with a carbon content in the range 0%–50%, were deposited onto Si (100) wafers by plasma enhanced chemical vapor deposition. Various techniques, such as X-ray photoelectron spectroscopy (XPS), infrared (IR) transmission spectroscopy, optical microscopy, and microhardness measurements were used to characterize the laser-induced composition evolution and crystallization processes. The characteristics of the crystallized samples are promising for application as protective coatings for devices used in severe operating conditions. |
| doi_str_mv | 10.1016/0257-8972(95)02720-3 |
| format | Article |
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| identifier | ISSN: 0257-8972 |
| ispartof | Surface & coatings technology, 1996-03, Vol.80 (1), p.237-241 |
| issn | 0257-8972 1879-3347 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Crystallization Exact sciences and technology Laser treatment Physics Silicon carbide Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Crystallization of amorphous silicon carbide thin films by laser treatment |
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