Crystallization of amorphous silicon carbide thin films by laser treatment

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were crystallized by laser treatment. The samples, with a carbon content in the range 0%–50%, were deposited onto Si (100) wafers by plasma enhanced chemical vapor deposition. Various techniques, such as X-ray photoelectron spectroscopy (XPS), infrared (IR) transmission spectroscopy, optical microscopy, and microhardness measurements were used to characterize the laser-induced composition evolution and crystallization processes. The characteristics of the crystallized samples are promising for application as protective coatings for devices used in severe operating conditions.