Measurement of intrinsic stresses during growth of aluminium nitride thin films by reactive sputter deposition

Real-time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room-temperature measurements on polycrystalline films corroborate previous post-growth measurements. Our high-temperature measurements provide e...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1993-08, Vol.74 (4), p.2411-2414
Hauptverfasser:	MENG, W. J, SELL, J. A, EESLEY, G. L, PERRY, T. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Mechanical and acoustical properties Methods of deposition of films and coatings film growth and epitaxy Physical properties of thin films, nonelectronic Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Real-time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room-temperature measurements on polycrystalline films corroborate previous post-growth measurements. Our high-temperature measurements provide evidence of large intrinsic stresses during epitaxial growth of AlN on Si(111) and insignificant stress relaxation during growth.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.354701