Electron microscopy of structurally different titanium disilicide films, obtained in one technological process

Thin films of TiSi x on Si and SiO 2 with different phases and structural properties obtained in one technological cycle were investigated by high-resolution electron microscopy (HREM). Even at relatively low temperatures the film's structure was significantly different. The optimal value for the process was found. The titanium disilicide phase formation process on Si and SiO 2 near the interface regions was investigated using a TiSi x -SiO 2/Si(100) system, in which the SiO 2 layer thickness varied from a few nanometres to 200 nm. Investigations of TiSi x films on wedge-like SiO 2 revealed a specific growth of silicide phases at SiO 2 layer thickness 5 nm < d < 20 nm due to lateral diffusion of Si and film-SiO 2 layer interaction.