Low temperature molecular beam epitaxial growth of ZnS/GaAs(001) by using elemental sulfur source

We report successful growth of ZnS on GaAs(001) using elemental sulfur and zinc sources. In order to use S, which has a very high vapor pressure for molecular beam epitaxy, a new type of effusion cell is developed. The cell is composed of the effuser and post-heating zones. Not only the control of v...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 1993-02, Vol.127 (1), p.314-317
Hauptverfasser:	Yoneta, Minoru, Ohishi, Masakazu, Saito, Hiroshi, Hamasaki, Tetsuya
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We report successful growth of ZnS on GaAs(001) using elemental sulfur and zinc sources. In order to use S, which has a very high vapor pressure for molecular beam epitaxy, a new type of effusion cell is developed. The cell is composed of the effuser and post-heating zones. Not only the control of vapor pressure, but also bakeout of the MBE chamber could be achieved. ZnS/GaAs could be grown at temperatures as low as 150°C using S beam post-heated at 210°C and conventional Zn beam. Low temperature photoluminescence shows that high quality ZnS films are grown.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(93)90628-A