MOCVD grown CdZnTe/GaAs/Si substrates for large-area HgCdTe IRFPAs
A thermal-expansion-matched focal plane array was achieved by substituting the title substrate in place of bulk CdZnTe substrates to grow HgCdTe p-on-n double-layer heterojunctions by controllably doped Hg melt LPE. (100)CdZnTe layers were grown by MOCVD on GaAs/Si using a vertical-flow high-speed r...
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| Veröffentlicht in: | Journal of electronic materials 1993-08, Vol.22 (8), p.835-842 |
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| container_title | Journal of electronic materials |
| container_volume | 22 |
| creator | JOHNSON, S. M VIGIL, J. A MYROSZNYK, J. M JAMES, J. B COCKRUM, C. A KONKEL, W. H KALISHER, M. H RISSER, R. F TUNG, T HAMILTON, W. J AHLGREN, W. L |
| description | A thermal-expansion-matched focal plane array was achieved by substituting the title substrate in place of bulk CdZnTe substrates to grow HgCdTe p-on-n double-layer heterojunctions by controllably doped Hg melt LPE. (100)CdZnTe layers were grown by MOCVD on GaAs/Si using a vertical-flow high-speed rotating disk reactor. |
| doi_str_mv | 10.1007/BF02817494 |
| format | Article |
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| ispartof | Journal of electronic materials, 1993-08, Vol.22 (8), p.835-842 |
| issn | 0361-5235 1543-186X |
| language | eng |
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| source | SpringerNature Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | MOCVD grown CdZnTe/GaAs/Si substrates for large-area HgCdTe IRFPAs |
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