MOCVD grown CdZnTe/GaAs/Si substrates for large-area HgCdTe IRFPAs

A thermal-expansion-matched focal plane array was achieved by substituting the title substrate in place of bulk CdZnTe substrates to grow HgCdTe p-on-n double-layer heterojunctions by controllably doped Hg melt LPE. (100)CdZnTe layers were grown by MOCVD on GaAs/Si using a vertical-flow high-speed r...

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Veröffentlicht in:	Journal of electronic materials 1993-08, Vol.22 (8), p.835-842
Hauptverfasser:	JOHNSON, S. M, VIGIL, J. A, MYROSZNYK, J. M, JAMES, J. B, COCKRUM, C. A, KONKEL, W. H, KALISHER, M. H, RISSER, R. F, TUNG, T, HAMILTON, W. J, AHLGREN, W. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:	A thermal-expansion-matched focal plane array was achieved by substituting the title substrate in place of bulk CdZnTe substrates to grow HgCdTe p-on-n double-layer heterojunctions by controllably doped Hg melt LPE. (100)CdZnTe layers were grown by MOCVD on GaAs/Si using a vertical-flow high-speed rotating disk reactor.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/BF02817494