Growth and characterization of CdTe, HgTe, and HgCdTe by atomic layer epitaxy

Growth and characterization of CdTe, HgTe, and HgCdTe by atomic layer epitaxy

ALE deposition experiments were done at atmospheric pressure in a horizontal reactor equipped with a fast switching manifold. Methylallytelluride, dimethylmercury, and dimethylcadmium were used for Te, Hg, and Cd sources, resp. ALE of HgTe was achieved at 140 degrees C, and the monolayer per cycle c...

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Veröffentlicht in:Thin solid films 1993-01, Vol.25 (1-2), p.261-264
Hauptverfasser: Karam, N H, Wolfson, R G, Bhat, I B, Ehsani, H, Ghandhi, S K
Format: Artikel
Sprache:eng
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Zusammenfassung:ALE deposition experiments were done at atmospheric pressure in a horizontal reactor equipped with a fast switching manifold. Methylallytelluride, dimethylmercury, and dimethylcadmium were used for Te, Hg, and Cd sources, resp. ALE of HgTe was achieved at 140 degrees C, and the monolayer per cycle condition extended over a wide range of dimethylmercury flux. ALE growth of CdTe was carried out at 250-290 degrees C and reactant partial pressure. HgCdTe layers were grown by alternately depositing HgTe and CdTe onto CdTe substrates, then interdiffusing them at higher temps.
ISSN:0040-6090