A low-threshold 1.3 μm GaInAsP/InP flat-surface circular buried heterostructure surface emitting laser

A low-threshold 1.3 μm GaInAsP/InP flat-surface circular buried heterostructure surface emitting laser

The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 mu m in diameter and 1.2 mu m in depth was realized with good reproducibility. Low-threshold (I sub(th) = 52 mA) lasi...

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Veröffentlicht in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP 1993-01, Vol.32 (3A), p.1126-1127
Hauptverfasser: BABA, T, MATSUOKA, K, KOYAMA, F, IGA, K
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Sprache:eng
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Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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container_end_page 1127
container_issue 3A
container_start_page 1126
container_title JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP
container_volume 32
creator BABA, T
MATSUOKA, K
KOYAMA, F
IGA, K
description The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 mu m in diameter and 1.2 mu m in depth was realized with good reproducibility. Low-threshold (I sub(th) = 52 mA) lasing operation of a 1.3- mu m-range FCBH surface emitting laser with a pair of dielectric micromirrors was achieved in a pulsed condition at 0 degree C.
doi_str_mv 10.1143/JJAP.32.1126
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
title A low-threshold 1.3 μm GaInAsP/InP flat-surface circular buried heterostructure surface emitting laser
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