A low-threshold 1.3 μm GaInAsP/InP flat-surface circular buried heterostructure surface emitting laser

A low-threshold 1.3 μm GaInAsP/InP flat-surface circular buried heterostructure surface emitting laser

The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 mu m in diameter and 1.2 mu m in depth was realized with good reproducibility. Low-threshold (I sub(th) = 52 mA) lasi...

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Veröffentlicht in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP 1993-01, Vol.32 (3A), p.1126-1127
Hauptverfasser: BABA, T, MATSUOKA, K, KOYAMA, F, IGA, K
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Beschreibung
Zusammenfassung:The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 mu m in diameter and 1.2 mu m in depth was realized with good reproducibility. Low-threshold (I sub(th) = 52 mA) lasing operation of a 1.3- mu m-range FCBH surface emitting laser with a pair of dielectric micromirrors was achieved in a pulsed condition at 0 degree C.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.1126