Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

Films were grown by MBE on (100)-oriented GaAs substrates under conditions of excess group II flux at a substrate temp. of 320 degrees C. Optically pumped lasing in CdZnTe/ZnTe multiple quantum waves with thresholds > or = 6 kW/cm sup 2 were observed. Quasi-continuous wave optically pumped lasing...

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Veröffentlicht in:	Journal of electronic materials 1993-05, Vol.22 (5), p.479-484
Hauptverfasser:	FELDMAN, R. D, HARRIS, T. D, ZUCKER, J. E, LEE, D, AUSTIN, R. F, JOHNSON, A. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
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creator	FELDMAN, R. D HARRIS, T. D ZUCKER, J. E LEE, D AUSTIN, R. F JOHNSON, A. M
description	Films were grown by MBE on (100)-oriented GaAs substrates under conditions of excess group II flux at a substrate temp. of 320 degrees C. Optically pumped lasing in CdZnTe/ZnTe multiple quantum waves with thresholds > or = 6 kW/cm sup 2 were observed. Quasi-continuous wave optically pumped lasing at and above RT was achieved when one facet was reflectively coated (threshold of 1.2 kW/cm sup - sup 2 (avg power) at 25 degrees ). Limitations imposed on sample design by the strong dependence of lattice constant and weak dependence of refractive index on composition are discussed.
doi_str_mv	10.1007/BF02661617
format	Article
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subjects	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
title	Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells
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