Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

Films were grown by MBE on (100)-oriented GaAs substrates under conditions of excess group II flux at a substrate temp. of 320 degrees C. Optically pumped lasing in CdZnTe/ZnTe multiple quantum waves with thresholds > or = 6 kW/cm sup 2 were observed. Quasi-continuous wave optically pumped lasing at and above RT was achieved when one facet was reflectively coated (threshold of 1.2 kW/cm sup - sup 2 (avg power) at 25 degrees ). Limitations imposed on sample design by the strong dependence of lattice constant and weak dependence of refractive index on composition are discussed.