Ion Migration in Perovskite Light‐Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

In recent years, perovskite light‐emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low‐temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically discussed by considering the fundamental and engineering aspects of ion‐related issues in PeLEDs, including the material and processing origins of ion generation, the mechanisms driving ion migration, characterization approaches for probing ion distributions, the effects of ion migration on device performance and stability, and strategies for ion management in PeLEDs. Finally, perspectives on remaining challenges and future opportunities are highlighted. The fundamental and engineering aspects of ion‐related issues in perovskite light‐emitting diodes (PeLEDs) are reviewed, including the origins and driving mechanisms of ion migration, characterization approaches for probing ion distribution, impact of ion migration on device performance and stability, and strategies for ion management in PeLEDs. Perspectives on the remaining challenges and future opportunities are highlighted.