Free and bound exciton photoluminescence of quantum well affected by free carriers

Free exciton (FE) and bound exciton (BE) photoluminescence (PL) of quantum well (QW) affected by free carrier (FC) is studied by a model which includes the transfer of particles among FC, FE, and BE states. It is shown that FC state is important not only at high temperature but also at low temperatu...

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Veröffentlicht in:Applied physics letters 1993-02, Vol.62 (5), p.493-495
1. Verfasser: Ping, Er-Xuan
Format: Artikel
Sprache:eng
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Zusammenfassung:Free exciton (FE) and bound exciton (BE) photoluminescence (PL) of quantum well (QW) affected by free carrier (FC) is studied by a model which includes the transfer of particles among FC, FE, and BE states. It is shown that FC state is important not only at high temperature but also at low temperature. General formulas for FE and BE PL are developed. The two-dimensional law of mass action is reproduced for high temperature, and the trapping of FE by defects is obtained for low defect concentration. Temperature behavior of FE and BE PL for high defect concentration is also discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108889