Oxidation behavior of CVD and single crystal SiC at 1100°C

High purity CVD silicon carbide fabricated by a commercial process was examined and oxidised at 1100 C along with high purity single crystal silicon carbide. The freestanding CVD thick films had a highly textured polycrystalline microstructure, with the octahedral directions of the crystals parallel to the growth direction. This texturing maintained the polarity of the 43m crystal structure, implying that the octahedral directions grew significantly faster during the CVD process. The octahedral face of the cubic, CVD-SiC oxidised at the same rate as the basal face of the single crystal SiC. 20 refs.