Theoretical design of 460 nm ZnCdSSe laser diodes

Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold current density calculation was based on the laser theory established for the III-V laser diode (LD) system. The result of the threshold current density calculation indicated that the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold current level at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable target value for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted threshold current density of such a LD could be as low as 450 A/cm 2 at RT.