Hall effect characterization of LPE HgCdTe P/n heterojunctions

Field and temp. dependences of Hall coeff. are used to simultaneously extract information about the p and n layers in long-wavelength ir title heterojunctions. Field dependence allows the effects of high-mobility electrons to be separated from those of low-mobility holes.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 1993-08, Vol.22 (8), p.907-914
Hauptverfasser:	TOBIN, S. P, PULTZ, G. N, KRUEGER, E. E, KESTIGIAN, M, WONG, K.-K, NORTON, P. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Field and temp. dependences of Hall coeff. are used to simultaneously extract information about the p and n layers in long-wavelength ir title heterojunctions. Field dependence allows the effects of high-mobility electrons to be separated from those of low-mobility holes.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/bf02817504