Tritertiarybutylaluminum as an organometallic source for epitaxial growth of AlGaSb

Tritertiarybutylaluminum as an organometallic source for epitaxial growth of AlGaSb

A new organometallic source, tritertiarybutylaluminum (TTBAl), has been used in growth of AlxGa1−xSb epilayers by low pressure organometallic vapor phase epitaxy. Ternary alloys were grown over the whole composition range 0

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Veröffentlicht in:Applied physics letters 1995-09, Vol.67 (10), p.1384-1386
Hauptverfasser: Wang, C. A., Finn, M. C., Salim, S., Jensen, K. F., Jones, A. C.
Format: Artikel
Sprache:eng
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Zusammenfassung:A new organometallic source, tritertiarybutylaluminum (TTBAl), has been used in growth of AlxGa1−xSb epilayers by low pressure organometallic vapor phase epitaxy. Ternary alloys were grown over the whole composition range 0
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115541