2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET

A two‐dimensional analytical model for an AlGaN/GaN MODFET is presented. The model assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and accurately predicts the output conductance arising from the channel length modulation. The effects of spontaneous and piezoelectric polarization at the AlGaN/GaN heterointerface, the field‐dependent mobility, and the parasitic source/drain resistances have been incorporated in the analysis. A good fit with the experimental data is obtained for an Al0.15Ga0.85N/GaN MODFET, thus proving the validity of our model. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 117–123, 2001.