Femtosecond optical response of low temperature grown In sub(0.53)Ga sub(0.47)As

A femtosecond, tunable color center laser was used to conduct degenerate pump-probe transmission spectroscopy of thin film low temperature grown molecular beam epitaxy In sub(0.53)Ga sub(0.47)As samples. Low temperature molecular beam epitaxy In sub(0.53)Ga sub(0.47)As exhibits a growth-temperature dependent femtosecond optical response when probed near the conduction band edge. Below T sub(g) identical with 250 degree C, the optical response time of the material is subpicosecond in duration, and we observe induced absorption, which we suggest is due to the formation of a quasi-'three-level system'.