Three-dimensional transient electrothermal simulation of electrostatic discharge protection circuits
Transient electrothermal simulation of ESD protection circuits using the 3-D finite element device simulator will be shown to explain the electrothermal physics in ESD protection circuits in 0.5 and 0.25 μm channel length CMOS technologies. Simulation, ESD and failure analysis will be compared for e...
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Veröffentlicht in: | Journal of electrostatics 1995, Vol.36 (1), p.55-80 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Transient electrothermal simulation of ESD protection circuits using the 3-D finite element device simulator will be shown to explain the electrothermal physics in ESD protection circuits in 0.5 and 0.25 μm channel length CMOS technologies. Simulation, ESD and failure analysis will be compared for evaluation of correlation. |
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ISSN: | 0304-3886 1873-5738 |
DOI: | 10.1016/0304-3886(95)00024-5 |