Spin memory effect in charged single telecom quantum dots

Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the qu...

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Veröffentlicht in:Optics express 2021-10, Vol.29 (21), p.34024-34034
Hauptverfasser: Podemski, Paweł, Gawełczyk, Michał, Wyborski, Paweł, Salamon, Hanna, Burakowski, Marek, Musiał, Anna, Reithmaier, Johann Peter, Benyoucef, Mohamed, Sęk, Grzegorz
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Sprache:eng
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Zusammenfassung:Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a very dense ladder of excited states providing relatively easy quasi-resonant optical excitation, and together with telecom wavelengths emission they bring quantum gates and memories closer to compatibility with fiber-optic communication.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.438708