Spin memory effect in charged single telecom quantum dots: erratum

Spin memory effect in charged single telecom quantum dots: erratum

This erratum corrects the value of the wetting layer thickness provided in our Article [ Opt. Express 29 , 34024 ( 2021 ) 10.1364/OE.438708 ]. This misprint does not influence the results and conclusions presented in the original Article.

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Veröffentlicht in:Optics express 2021-10, Vol.29 (22), p.36460-36460
Hauptverfasser: Podemski, Paweł, Gawełczyk, Michał, Wyborski, Paweł, Salamon, Hanna, Burakowski, Marek, Musiał, Anna, Reithmaier, Johann Peter, Benyoucef, Mohamed, Sęk, Grzegorz
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Sprache:eng
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Zusammenfassung:This erratum corrects the value of the wetting layer thickness provided in our Article [ Opt. Express 29 , 34024 ( 2021 ) 10.1364/OE.438708 ]. This misprint does not influence the results and conclusions presented in the original Article.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.445635