DX-like centre in bulk GaSb:S

Hall, conductance, capacitance transients and DLTS measurements were carried out on Czochralski grown GaSb doped with sulphur. A deep centre with a small and temperature dependent capture cross section and with a high concentration was observed. Such features together with the detected persistent ph...

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Veröffentlicht in:Solid state communications 1993, Vol.86 (1), p.19-22
Hauptverfasser: HUBIK, P, SMID, V, KRISTOFIK, J, STEPANEK, B, SESTAKOVA, V
Format: Artikel
Sprache:eng
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Zusammenfassung:Hall, conductance, capacitance transients and DLTS measurements were carried out on Czochralski grown GaSb doped with sulphur. A deep centre with a small and temperature dependent capture cross section and with a high concentration was observed. Such features together with the detected persistent photoconductivity indicate that the observed centre is sulphur related DX-like centre. Some properties of the centre are presented and discussed.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(93)90240-N