Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates
Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0° to 8° towards the [011] direction. The films were characterized with x-ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus...
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| Veröffentlicht in: | Applied physics letters 1993-08, Vol.63 (6), p.818-820 |
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| container_title | Applied physics letters |
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| creator | DE LYON, T. J ROTH, J. A WU, O. K JOHNSON, S. M COCKRUM, C. A |
| description | Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0° to 8° towards the [011] direction. The films were characterized with x-ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Single-crystal CdZnTe(100) films comparable in structural quality to those obtained with growth on GaAs/Si composite substrates have been demonstrated on both 4° and 8° misoriented Si with the use of ZnTe buffer layers. X-ray rocking curves with FWHM less than 300 arcsec for ZnTe (400) and less than 160 arcsec for CdZnTe(400) have been obtained for as-grown films. Specular surface morphologies, superior to those obtained on GaAs/Si composite substrates, are also observed. |
| doi_str_mv | 10.1063/1.109918 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25997296</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>25997296</sourcerecordid><originalsourceid>FETCH-LOGICAL-c285t-b56f630b0b76af9645f7851e2cd3ef4dda9f155326f9fd96570e3985fb47cc243</originalsourceid><addsrcrecordid>eNpFkEtLxDAUhYMoWEfBn5CFyLiokzRN0ixlfMKAC8eNm3KbJhrpY0xS1H9vhw7j6tzD-ThcDkLnlFxTItiCjqIULQ5QQomUKaO0OEQJIYSlQnF6jE5C-BwtzxhLkL513uiI274xemjAp5WBFpuNi_DjoMHvvv-OH7i3-K1bmzkl5ApDV-NlvfeL_6Tv8IubzjBUIXqIJpyiIwtNMGc7naHX-7v18jFdPT88LW9Wqc4KHtOKCysYqUglBVglcm5lwanJdM2MzesalKWcs0xYZWsluCSGqYLbKpdaZzmbocupd-P7r8GEWLYuaNM00Jl-CGXGlZKZEiM4n0Dt-xC8seXGuxb8b0lJuV2xpOW04ohe7DohaGish067sOdzRYrtT3-Kqmzp</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25997296</pqid></control><display><type>article</type><title>Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates</title><source>AIP Digital Archive</source><creator>DE LYON, T. J ; ROTH, J. A ; WU, O. K ; JOHNSON, S. M ; COCKRUM, C. A</creator><creatorcontrib>DE LYON, T. J ; ROTH, J. A ; WU, O. K ; JOHNSON, S. M ; COCKRUM, C. A</creatorcontrib><description>Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0° to 8° towards the [011] direction. The films were characterized with x-ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Single-crystal CdZnTe(100) films comparable in structural quality to those obtained with growth on GaAs/Si composite substrates have been demonstrated on both 4° and 8° misoriented Si with the use of ZnTe buffer layers. X-ray rocking curves with FWHM less than 300 arcsec for ZnTe (400) and less than 160 arcsec for CdZnTe(400) have been obtained for as-grown films. Specular surface morphologies, superior to those obtained on GaAs/Si composite substrates, are also observed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.109918</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1993-08, Vol.63 (6), p.818-820</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-b56f630b0b76af9645f7851e2cd3ef4dda9f155326f9fd96570e3985fb47cc243</citedby><cites>FETCH-LOGICAL-c285t-b56f630b0b76af9645f7851e2cd3ef4dda9f155326f9fd96570e3985fb47cc243</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4908155$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DE LYON, T. J</creatorcontrib><creatorcontrib>ROTH, J. A</creatorcontrib><creatorcontrib>WU, O. K</creatorcontrib><creatorcontrib>JOHNSON, S. M</creatorcontrib><creatorcontrib>COCKRUM, C. A</creatorcontrib><title>Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates</title><title>Applied physics letters</title><description>Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0° to 8° towards the [011] direction. The films were characterized with x-ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Single-crystal CdZnTe(100) films comparable in structural quality to those obtained with growth on GaAs/Si composite substrates have been demonstrated on both 4° and 8° misoriented Si with the use of ZnTe buffer layers. X-ray rocking curves with FWHM less than 300 arcsec for ZnTe (400) and less than 160 arcsec for CdZnTe(400) have been obtained for as-grown films. Specular surface morphologies, superior to those obtained on GaAs/Si composite substrates, are also observed.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLxDAUhYMoWEfBn5CFyLiokzRN0ixlfMKAC8eNm3KbJhrpY0xS1H9vhw7j6tzD-ThcDkLnlFxTItiCjqIULQ5QQomUKaO0OEQJIYSlQnF6jE5C-BwtzxhLkL513uiI274xemjAp5WBFpuNi_DjoMHvvv-OH7i3-K1bmzkl5ApDV-NlvfeL_6Tv8IubzjBUIXqIJpyiIwtNMGc7naHX-7v18jFdPT88LW9Wqc4KHtOKCysYqUglBVglcm5lwanJdM2MzesalKWcs0xYZWsluCSGqYLbKpdaZzmbocupd-P7r8GEWLYuaNM00Jl-CGXGlZKZEiM4n0Dt-xC8seXGuxb8b0lJuV2xpOW04ohe7DohaGish067sOdzRYrtT3-Kqmzp</recordid><startdate>19930809</startdate><enddate>19930809</enddate><creator>DE LYON, T. J</creator><creator>ROTH, J. A</creator><creator>WU, O. K</creator><creator>JOHNSON, S. M</creator><creator>COCKRUM, C. A</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19930809</creationdate><title>Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates</title><author>DE LYON, T. J ; ROTH, J. A ; WU, O. K ; JOHNSON, S. M ; COCKRUM, C. A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-b56f630b0b76af9645f7851e2cd3ef4dda9f155326f9fd96570e3985fb47cc243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DE LYON, T. J</creatorcontrib><creatorcontrib>ROTH, J. A</creatorcontrib><creatorcontrib>WU, O. K</creatorcontrib><creatorcontrib>JOHNSON, S. M</creatorcontrib><creatorcontrib>COCKRUM, C. A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DE LYON, T. J</au><au>ROTH, J. A</au><au>WU, O. K</au><au>JOHNSON, S. M</au><au>COCKRUM, C. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates</atitle><jtitle>Applied physics letters</jtitle><date>1993-08-09</date><risdate>1993</risdate><volume>63</volume><issue>6</issue><spage>818</spage><epage>820</epage><pages>818-820</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0° to 8° towards the [011] direction. The films were characterized with x-ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Single-crystal CdZnTe(100) films comparable in structural quality to those obtained with growth on GaAs/Si composite substrates have been demonstrated on both 4° and 8° misoriented Si with the use of ZnTe buffer layers. X-ray rocking curves with FWHM less than 300 arcsec for ZnTe (400) and less than 160 arcsec for CdZnTe(400) have been obtained for as-grown films. Specular surface morphologies, superior to those obtained on GaAs/Si composite substrates, are also observed.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.109918</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1993-08, Vol.63 (6), p.818-820 |
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| language | eng |
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| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T03%3A33%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Direct%20molecular-beam%20epitaxial%20growth%20of%20ZnTe(100)%20and%20CdZnTe(100)/ZnTe(100)%20on%20Si(100)%20substrates&rft.jtitle=Applied%20physics%20letters&rft.au=DE%20LYON,%20T.%20J&rft.date=1993-08-09&rft.volume=63&rft.issue=6&rft.spage=818&rft.epage=820&rft.pages=818-820&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.109918&rft_dat=%3Cproquest_cross%3E25997296%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25997296&rft_id=info:pmid/&rfr_iscdi=true |