Spin-valve RAM cell
This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30...
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| Veröffentlicht in: | IEEE transactions on magnetics 1995-11, Vol.31 (6), p.3206-3208 |
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| container_end_page | 3208 |
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| container_issue | 6 |
| container_start_page | 3206 |
| container_title | IEEE transactions on magnetics |
| container_volume | 31 |
| creator | Tang, D.D. Wang, P.K. Speriosu, V.S. Le, S. Kung, K.K. |
| description | This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell. |
| doi_str_mv | 10.1109/20.490329 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_25977978</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>490329</ieee_id><sourcerecordid>28603906</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-5743dea50e5b1252ac9fa9f23b082b9f0bfbd2300aeb137a10d56ce575c321b83</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhoMoWKsH8eapBxE8bJ1JNpudYyl-QUXw4xySdAIr23bdtAX_vVu29OppGOZ5H4ZXiEuEMSLQvYRxTqAkHYkBUo4ZQEHHYgCAZUZ5kZ-Ks5S-uzXXCANx9dFUy2zr6i2P3ievo8B1fS5OoqsTX-znUHw9PnxOn7PZ29PLdDLLglJmnWmTqzk7Daw9Si1doOgoSuWhlJ4i-OjnUgE49qiMQ5jrIrA2OiiJvlRDcdt7m3b1s-G0tosq7R5wS15tkpVlAYqg-B_UZAyZnfGuB0O7SqnlaJu2Wrj21yLYXT9Wgu376dibvdSl4OrYumWo0iEgCbEoTYdd91jFzIfr3vEHvmxpUA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25977978</pqid></control><display><type>article</type><title>Spin-valve RAM cell</title><source>IEEE Electronic Library (IEL)</source><creator>Tang, D.D. ; Wang, P.K. ; Speriosu, V.S. ; Le, S. ; Kung, K.K.</creator><creatorcontrib>Tang, D.D. ; Wang, P.K. ; Speriosu, V.S. ; Le, S. ; Kung, K.K.</creatorcontrib><description>This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/20.490329</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Copper ; Electronics ; Exact sciences and technology ; Magnetic devices ; Magnetic domain walls ; Magnetic materials ; Magnetization ; Nonvolatile memory ; Other magnetic recording and storage devices (including tapes, disks, and drums) ; Random access memory ; Read-write memory ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Spin valves ; Switches ; Wires</subject><ispartof>IEEE transactions on magnetics, 1995-11, Vol.31 (6), p.3206-3208</ispartof><rights>1996 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-5743dea50e5b1252ac9fa9f23b082b9f0bfbd2300aeb137a10d56ce575c321b83</citedby><cites>FETCH-LOGICAL-c337t-5743dea50e5b1252ac9fa9f23b082b9f0bfbd2300aeb137a10d56ce575c321b83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/490329$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/490329$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2911687$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tang, D.D.</creatorcontrib><creatorcontrib>Wang, P.K.</creatorcontrib><creatorcontrib>Speriosu, V.S.</creatorcontrib><creatorcontrib>Le, S.</creatorcontrib><creatorcontrib>Kung, K.K.</creatorcontrib><title>Spin-valve RAM cell</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.</description><subject>Applied sciences</subject><subject>Copper</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Magnetic devices</subject><subject>Magnetic domain walls</subject><subject>Magnetic materials</subject><subject>Magnetization</subject><subject>Nonvolatile memory</subject><subject>Other magnetic recording and storage devices (including tapes, disks, and drums)</subject><subject>Random access memory</subject><subject>Read-write memory</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Spin valves</subject><subject>Switches</subject><subject>Wires</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKsH8eapBxE8bJ1JNpudYyl-QUXw4xySdAIr23bdtAX_vVu29OppGOZ5H4ZXiEuEMSLQvYRxTqAkHYkBUo4ZQEHHYgCAZUZ5kZ-Ks5S-uzXXCANx9dFUy2zr6i2P3ievo8B1fS5OoqsTX-znUHw9PnxOn7PZ29PLdDLLglJmnWmTqzk7Daw9Si1doOgoSuWhlJ4i-OjnUgE49qiMQ5jrIrA2OiiJvlRDcdt7m3b1s-G0tosq7R5wS15tkpVlAYqg-B_UZAyZnfGuB0O7SqnlaJu2Wrj21yLYXT9Wgu376dibvdSl4OrYumWo0iEgCbEoTYdd91jFzIfr3vEHvmxpUA</recordid><startdate>19951101</startdate><enddate>19951101</enddate><creator>Tang, D.D.</creator><creator>Wang, P.K.</creator><creator>Speriosu, V.S.</creator><creator>Le, S.</creator><creator>Kung, K.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7U5</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>7SP</scope></search><sort><creationdate>19951101</creationdate><title>Spin-valve RAM cell</title><author>Tang, D.D. ; Wang, P.K. ; Speriosu, V.S. ; Le, S. ; Kung, K.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-5743dea50e5b1252ac9fa9f23b082b9f0bfbd2300aeb137a10d56ce575c321b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Applied sciences</topic><topic>Copper</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Magnetic devices</topic><topic>Magnetic domain walls</topic><topic>Magnetic materials</topic><topic>Magnetization</topic><topic>Nonvolatile memory</topic><topic>Other magnetic recording and storage devices (including tapes, disks, and drums)</topic><topic>Random access memory</topic><topic>Read-write memory</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spin valves</topic><topic>Switches</topic><topic>Wires</topic><toplevel>online_resources</toplevel><creatorcontrib>Tang, D.D.</creatorcontrib><creatorcontrib>Wang, P.K.</creatorcontrib><creatorcontrib>Speriosu, V.S.</creatorcontrib><creatorcontrib>Le, S.</creatorcontrib><creatorcontrib>Kung, K.K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tang, D.D.</au><au>Wang, P.K.</au><au>Speriosu, V.S.</au><au>Le, S.</au><au>Kung, K.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin-valve RAM cell</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>1995-11-01</date><risdate>1995</risdate><volume>31</volume><issue>6</issue><spage>3206</spage><epage>3208</epage><pages>3206-3208</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/20.490329</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0018-9464 |
| ispartof | IEEE transactions on magnetics, 1995-11, Vol.31 (6), p.3206-3208 |
| issn | 0018-9464 1941-0069 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25977978 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Copper Electronics Exact sciences and technology Magnetic devices Magnetic domain walls Magnetic materials Magnetization Nonvolatile memory Other magnetic recording and storage devices (including tapes, disks, and drums) Random access memory Read-write memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spin valves Switches Wires |
| title | Spin-valve RAM cell |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T13%3A02%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Spin-valve%20RAM%20cell&rft.jtitle=IEEE%20transactions%20on%20magnetics&rft.au=Tang,%20D.D.&rft.date=1995-11-01&rft.volume=31&rft.issue=6&rft.spage=3206&rft.epage=3208&rft.pages=3206-3208&rft.issn=0018-9464&rft.eissn=1941-0069&rft.coden=IEMGAQ&rft_id=info:doi/10.1109/20.490329&rft_dat=%3Cproquest_RIE%3E28603906%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25977978&rft_id=info:pmid/&rft_ieee_id=490329&rfr_iscdi=true |