Spin-valve RAM cell

Spin-valve RAM cell

This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30...

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Veröffentlicht in:IEEE transactions on magnetics 1995-11, Vol.31 (6), p.3206-3208
Hauptverfasser: Tang, D.D., Wang, P.K., Speriosu, V.S., Le, S., Kung, K.K.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Copper
Electronics
Exact sciences and technology
Magnetic devices
Magnetic domain walls
Magnetic materials
Magnetization
Nonvolatile memory
Other magnetic recording and storage devices (including tapes, disks, and drums)
Random access memory
Read-write memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spin valves
Switches
Wires
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Beschreibung
Zusammenfassung:This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.490329