Cu(200) films on Si(100): simulation and experiment

Epitaxial deposition of Cu on Si(100) is obtained with deposition rates up to 30 Å s -1. A simple Monte Carlo simulation qualitatively reproduces the results. It is seen that the deposition rates employed in the usual experiments may be lower than the ideal values for obtaining the best epitaxial re...

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Veröffentlicht in:	Thin solid films 1993-02, Vol.224 (1), p.4-6
Hauptverfasser:	Mors, P.M., Trein, P.E., Schreiner, W.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	Epitaxial deposition of Cu on Si(100) is obtained with deposition rates up to 30 Å s -1. A simple Monte Carlo simulation qualitatively reproduces the results. It is seen that the deposition rates employed in the usual experiments may be lower than the ideal values for obtaining the best epitaxial results.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(93)90449-Y