$Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction$

Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction

Knowledge of the lattice mismatch in the AlAs/GaAs system is needed for measuring the Al content in Ga 1 - x Al x As/GaAs heteroepitaxial structures. This mismatch has been accurately measured by high resolution X-ray diffractometry in AlAs/GaAs heterostructures grown by molecular beam epitaxy. For...

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Veröffentlicht in:	Journal of crystal growth 1993-09, Vol.132 (3), p.427-434
Hauptverfasser:	Bocchi, C., Ferrari, C., Franzosi, P., Bosacchi, A., Franchi, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:	Knowledge of the lattice mismatch in the AlAs/GaAs system is needed for measuring the Al content in Ga 1 - x Al x As/GaAs heteroepitaxial structures. This mismatch has been accurately measured by high resolution X-ray diffractometry in AlAs/GaAs heterostructures grown by molecular beam epitaxy. For a completely strained AlAs epilayer a relative mismatch of 2.775X10 -3 has been obtained with an estimated accuracy of ±5x10 -6. The Poisson ratio of AlAs has been also determined by comparing a suitable set of diffraction profiles recorded in completely strained and partially relaxed epilayers respectively. A value of v = 0.322±0.005, in agreement with previously published data has been found.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(93)90068-8