Optically transparent ITO emitter contacts in the fabrication of InP/InGaAs HPT's

Optically transparent ITO emitter contacts in the fabrication of InP/InGaAs HPT's

An optically transparent emitter InP/InGaAs heterojunction phototransistor (HPT) fabricated using Indium Tin Oxide (ITO) as the ohmic contact is presented for the first time; these devices show similar electrical characteristics to their opaque emitter counterparts and enhanced optical responsivitie...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1995-09, Vol.43 (9), p.2299-2303
Hauptverfasser: Bashar, S.A., Rezazadeh, A.A.
Format: Artikel
Sprache:eng
Schlagworte:
Electric variables
Heterojunctions
Indium gallium arsenide
Indium phosphide
Indium tin oxide
Ohmic contacts
Optical device fabrication
Optical devices
Phototransistors
Stimulated emission
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Zusammenfassung:An optically transparent emitter InP/InGaAs heterojunction phototransistor (HPT) fabricated using Indium Tin Oxide (ITO) as the ohmic contact is presented for the first time; these devices show similar electrical characteristics to their opaque emitter counterparts and enhanced optical responsivities (5.4 A/W at 780 nm wavelength). Measured spectral response suggests responsivities of up to 30 A/W and 22 A/W at /spl lambda/=1310 nm and 1550 nm respectively.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.414581