Preparation and properties of a capacitor structure formed by double-sided YBa\+v\2\-v\Cu\+v\3\-v\O\+v\7-x\-v\ films on SrTiO\+v\3\-v\ substrate

The films on both sides of the substrate exhibited well-oriented crystalline structure with the c axis normal to the substrate surface. The properties of the resultant SrTiO\+v\3\-v\ capacitor with YBCO electrodes were examined at 1 GHz. The following parameters were obtained: relative dielectric permittivity of 4 x 10\+3\- at 77 K and dielectric loss tangent of 3 x 10\+-4\- at 77 K. No hysteresis in the dependence of the capacitance on the DC bias voltage was observed. (Original abstract-amended)