A 0.5-W complementary AlGaAs-GaAs HBT push-pull amplifier at 10 GHz

A 0.5-W complementary AlGaAs-GaAs HBT push-pull amplifier at 10 GHz

X-band high-efficiency complementary push-pull amplifiers using P-n-p and N-p-n AlGaAs-GaAs HBTs were demonstrated. One of the amplifiers achieved an output power of 500 mW with 6-dB gain and 41.8% power-added efficiency at 10 GHz. High efficiency was achieved by Class-B push-pull operation, which a...

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Veröffentlicht in:IEEE microwave and guided wave letters 1993-02, Vol.3 (2), p.45-47
Hauptverfasser: Tserng, H.Q., Hill, D.G., Kim, T.S.
Format: Artikel
Sprache:eng
Schlagworte:
Doping
Fingers
Heterojunction bipolar transistors
High power amplifiers
Microwave amplifiers
Microwave circuits
Microwave devices
Microwave frequencies
Operational amplifiers
Power amplifiers
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Zusammenfassung:X-band high-efficiency complementary push-pull amplifiers using P-n-p and N-p-n AlGaAs-GaAs HBTs were demonstrated. One of the amplifiers achieved an output power of 500 mW with 6-dB gain and 41.8% power-added efficiency at 10 GHz. High efficiency was achieved by Class-B push-pull operation, which also results in second harmonic cancellation.< >
ISSN:1051-8207
1558-2329
DOI:10.1109/75.196037