Band gap uniformity and layer stability of HgTe-CdTe superlattices grown by photon-assisted molecular beam epitaxy

Results of ir photoluminescence of (211)B title superlattices show that cut-off wavelength uniformity can be controlled to a level commensurate with the demands of advanced ir detector fabrication. Results are less prone to interdiffusion than previously believed.

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Veröffentlicht in:Journal of electronic materials 1993-08, Vol.22 (8), p.1107-1112
Hauptverfasser: Vanka, R. W., Harris, K. A., Mohnkern, L. M., Reisinger, A. R., Myers, T. H., Otsuka, N.
Format: Artikel
Sprache:eng
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Zusammenfassung:Results of ir photoluminescence of (211)B title superlattices show that cut-off wavelength uniformity can be controlled to a level commensurate with the demands of advanced ir detector fabrication. Results are less prone to interdiffusion than previously believed.
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02817533