Photovoltaic effects in metal/semiconductor barrier structures with boron-doped polycrystalline diamond films

Photovoltaic effects in metal/semiconductor barrier structures with boron-doped polycrystalline diamond films

Metal/semiconductor unipolar barrier structures with boron-doped polycrystalline diamond films were fabricated and their electrical and photoelectric properties investigated. The photovoltage of a photoconverter exceeded 0.7 V as measured in open circuit and could be controlled by the bias voltage....

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Veröffentlicht in:Thin solid films 1995-10, Vol.266 (2), p.278-281
Hauptverfasser: Polyakov, V.I., Perov, P.I., Rossukanyi, N.M., Rukovishnikov, A.I., Khomich, A.V., Prelas, M.A., Khasawinah, S., Sung, T., Popovici, G.
Format: Artikel
Sprache:eng
Schlagworte:
Boron
Diamond
Doping
Electrical properties and measurements
Semiconductors
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Zusammenfassung:Metal/semiconductor unipolar barrier structures with boron-doped polycrystalline diamond films were fabricated and their electrical and photoelectric properties investigated. The photovoltage of a photoconverter exceeded 0.7 V as measured in open circuit and could be controlled by the bias voltage. A memory effect was evidenced in metal/polycrystalline diamond structures which consists of an increasing photovoltage after a short time biasing.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(95)06737-X