Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition

Textured diamond films have been deposited on β-SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] direc...

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Veröffentlicht in:	Applied physics letters 1992-02, Vol.60 (6), p.698-700
Hauptverfasser:	STONER, B. R, GLASS, J. T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Textured diamond films have been deposited on β-SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106541