Photoelectron spectroscopy of ion-irradiated B-doped CVD diamond surfaces

Chemical vapour deposition (CVD) diamond films were irradiated by 1 keV argon ions at room temperature with doses ranging from 3.6 × 10 12 to 1.1 × 10 16 Ar + cm 2. The influence of sputtering on the valence band density of states of a boron-doped CVD diamond film was investigated by ultraviolet photoelectron spectroscopy and the changes in the plasmon features were observed by X-ray photoelectron spectroscopy of the carbon Is core level and its loss region. A gradual change from typical diamond features to amorphous carbon was observed after prolonged bombardment times. Above a critical dose D crit of 5.8 × 10 14 Ar + cm 2 the damaged surface layer is characterized by a splitting of the C Is bulk peak into two components: a bulk-like diamond peak at 285.3 eV binding energy and a defect peak with 1 eV lower binding energy, which is attributed to the production of an amorphous sp 2-rich carbon matrix. Moreover additional occupied states in the range of 0–4 eV binding energy, completely different to those observed on reconstructed diamond surfaces, were observed in the valence band spectra of the ion-irradiated diamond surface. These filled states can also be attributed to the amorphous carbon matrix which is formed at high doses. At very low doses (< 3 × 10 14 ions cm 2) only a band bending of the C Is diamond core level peak, along with the formation of some occupied states in the band structure at around 3.8 eV binding energy was observed. A comparison with annealed hydrogen-free CVD diamond surfaces shows some similarities concerning these filled states. The obtained spectra are compared with other crystalline and amorphous forms of carbon and the results are discussed in terms of an irradiation-induced change in the atomic structure of the surface. A comparison of ion bombarded and annealed diamond samples clearly shows that no graphitization takes place in the latter case.