TEM study of the effect of growth interruption in MBE of InGaP/GaAs superlattices

TEM study of the effect of growth interruption in MBE of InGaP/GaAs superlattices

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Veröffentlicht in:Journal of electronic materials 1992, Vol.21 (1), p.129-133
Hauptverfasser: MAHALINGAM, K, NAKAMURA, Y, OTSUKA, N, LEE, H. Y, HAFICH, M. J, ROBINSON, G. Y
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:Article abstract not available.
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02670933