Theoretical study of a potential low-noise semimetal-based avalanche photodetector
The authors present a theoretical analysis of a possible avalanching photodetector (APD)-based on II-VI compound semiconductors. Each unit cell is composed of a HgTe layer, or a similar semimetal, sandwiched between two layers of CdTe and HgCdTe or similar semiconducting materials. The barrier layer...
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| Veröffentlicht in: | IEEE journal of quantum electronics 1992-02, Vol.28 (2), p.507-513 |
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| container_title | IEEE journal of quantum electronics |
| container_volume | 28 |
| creator | Yang Wang Mansour, N. Salem, A. Brennan, K.F. Ruden, P.P. |
| description | The authors present a theoretical analysis of a possible avalanching photodetector (APD)-based on II-VI compound semiconductors. Each unit cell is composed of a HgTe layer, or a similar semimetal, sandwiched between two layers of CdTe and HgCdTe or similar semiconducting materials. The barrier layers are graded so that the leading barrier height is just high enough to eliminate the thermionic emission dark current out of the well. The use of a semimetal within the well has a distinct advantage over a semiconductor, which is that the ionization process is essentially an interband mechanism since the confined carriers within the well lie within the overlapping conduction and valence bands. As a result, the concentration of target carriers is virtually inexhaustible as in a conventional interband device.< > |
| doi_str_mv | 10.1109/3.123280 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_25909375</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>123280</ieee_id><sourcerecordid>28649678</sourcerecordid><originalsourceid>FETCH-LOGICAL-c401t-2fe536deda3220082f53803dc0b8a2991cd9bdf07730c0024c9def9de4f7374e3</originalsourceid><addsrcrecordid>eNqFkM9LwzAUgIMoOKfg2VMPIl46X5K2SY4y_AUDQea5ZMkLi7RLbTJl_70dHXr0EB55fHw8PkIuKcwoBXXHZ5RxJuGITGhZypwKyo_JBIDKXFElTslZjB_DtygkTMjbco2hx-SNbrKYtnaXBZfprAsJN8kPyyZ855vgI2YRW99i0k2-0hFtpr90ozdmjVm3DilYTGhS6M_JidNNxIvDnJL3x4fl_DlfvD69zO8XuSmAppw5LHll0WrOGIBkruQSuDWwkpopRY1VK-tACA4GgBVGWXTDK5zgokA-JTejt-vD5xZjqlsfDTbDTRi2sWayKlQl5P9gqUBxUQ7g7QiaPsTYo6u73re639UU6n3dmtdj3QG9Pjh1HNK5fgjh4y9fMlFVfI9djZhHxD_b6PgBNPmBvQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25909375</pqid></control><display><type>article</type><title>Theoretical study of a potential low-noise semimetal-based avalanche photodetector</title><source>IEEE Electronic Library (IEL)</source><creator>Yang Wang ; Mansour, N. ; Salem, A. ; Brennan, K.F. ; Ruden, P.P.</creator><creatorcontrib>Yang Wang ; Mansour, N. ; Salem, A. ; Brennan, K.F. ; Ruden, P.P.</creatorcontrib><description>The authors present a theoretical analysis of a possible avalanching photodetector (APD)-based on II-VI compound semiconductors. Each unit cell is composed of a HgTe layer, or a similar semimetal, sandwiched between two layers of CdTe and HgCdTe or similar semiconducting materials. The barrier layers are graded so that the leading barrier height is just high enough to eliminate the thermionic emission dark current out of the well. The use of a semimetal within the well has a distinct advantage over a semiconductor, which is that the ionization process is essentially an interband mechanism since the confined carriers within the well lie within the overlapping conduction and valence bands. As a result, the concentration of target carriers is virtually inexhaustible as in a conventional interband device.< ></description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.123280</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors ; Carrier confinement ; Charge carrier processes ; Dark current ; Electrons ; Exact sciences and technology ; Impact ionization ; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Photodetectors ; Physics ; Potential well ; Semiconductor device noise ; Semiconductor materials ; Superlattices</subject><ispartof>IEEE journal of quantum electronics, 1992-02, Vol.28 (2), p.507-513</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c401t-2fe536deda3220082f53803dc0b8a2991cd9bdf07730c0024c9def9de4f7374e3</citedby><cites>FETCH-LOGICAL-c401t-2fe536deda3220082f53803dc0b8a2991cd9bdf07730c0024c9def9de4f7374e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/123280$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/123280$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5276630$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang Wang</creatorcontrib><creatorcontrib>Mansour, N.</creatorcontrib><creatorcontrib>Salem, A.</creatorcontrib><creatorcontrib>Brennan, K.F.</creatorcontrib><creatorcontrib>Ruden, P.P.</creatorcontrib><title>Theoretical study of a potential low-noise semimetal-based avalanche photodetector</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>The authors present a theoretical analysis of a possible avalanching photodetector (APD)-based on II-VI compound semiconductors. Each unit cell is composed of a HgTe layer, or a similar semimetal, sandwiched between two layers of CdTe and HgCdTe or similar semiconducting materials. The barrier layers are graded so that the leading barrier height is just high enough to eliminate the thermionic emission dark current out of the well. The use of a semimetal within the well has a distinct advantage over a semiconductor, which is that the ionization process is essentially an interband mechanism since the confined carriers within the well lie within the overlapping conduction and valence bands. As a result, the concentration of target carriers is virtually inexhaustible as in a conventional interband device.< ></description><subject>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</subject><subject>Carrier confinement</subject><subject>Charge carrier processes</subject><subject>Dark current</subject><subject>Electrons</subject><subject>Exact sciences and technology</subject><subject>Impact ionization</subject><subject>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Photodetectors</subject><subject>Physics</subject><subject>Potential well</subject><subject>Semiconductor device noise</subject><subject>Semiconductor materials</subject><subject>Superlattices</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqFkM9LwzAUgIMoOKfg2VMPIl46X5K2SY4y_AUDQea5ZMkLi7RLbTJl_70dHXr0EB55fHw8PkIuKcwoBXXHZ5RxJuGITGhZypwKyo_JBIDKXFElTslZjB_DtygkTMjbco2hx-SNbrKYtnaXBZfprAsJN8kPyyZ855vgI2YRW99i0k2-0hFtpr90ozdmjVm3DilYTGhS6M_JidNNxIvDnJL3x4fl_DlfvD69zO8XuSmAppw5LHll0WrOGIBkruQSuDWwkpopRY1VK-tACA4GgBVGWXTDK5zgokA-JTejt-vD5xZjqlsfDTbDTRi2sWayKlQl5P9gqUBxUQ7g7QiaPsTYo6u73re639UU6n3dmtdj3QG9Pjh1HNK5fgjh4y9fMlFVfI9djZhHxD_b6PgBNPmBvQ</recordid><startdate>19920201</startdate><enddate>19920201</enddate><creator>Yang Wang</creator><creator>Mansour, N.</creator><creator>Salem, A.</creator><creator>Brennan, K.F.</creator><creator>Ruden, P.P.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19920201</creationdate><title>Theoretical study of a potential low-noise semimetal-based avalanche photodetector</title><author>Yang Wang ; Mansour, N. ; Salem, A. ; Brennan, K.F. ; Ruden, P.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c401t-2fe536deda3220082f53803dc0b8a2991cd9bdf07730c0024c9def9de4f7374e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</topic><topic>Carrier confinement</topic><topic>Charge carrier processes</topic><topic>Dark current</topic><topic>Electrons</topic><topic>Exact sciences and technology</topic><topic>Impact ionization</topic><topic>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Photodetectors</topic><topic>Physics</topic><topic>Potential well</topic><topic>Semiconductor device noise</topic><topic>Semiconductor materials</topic><topic>Superlattices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang Wang</creatorcontrib><creatorcontrib>Mansour, N.</creatorcontrib><creatorcontrib>Salem, A.</creatorcontrib><creatorcontrib>Brennan, K.F.</creatorcontrib><creatorcontrib>Ruden, P.P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yang Wang</au><au>Mansour, N.</au><au>Salem, A.</au><au>Brennan, K.F.</au><au>Ruden, P.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Theoretical study of a potential low-noise semimetal-based avalanche photodetector</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1992-02-01</date><risdate>1992</risdate><volume>28</volume><issue>2</issue><spage>507</spage><epage>513</epage><pages>507-513</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>The authors present a theoretical analysis of a possible avalanching photodetector (APD)-based on II-VI compound semiconductors. Each unit cell is composed of a HgTe layer, or a similar semimetal, sandwiched between two layers of CdTe and HgCdTe or similar semiconducting materials. The barrier layers are graded so that the leading barrier height is just high enough to eliminate the thermionic emission dark current out of the well. The use of a semimetal within the well has a distinct advantage over a semiconductor, which is that the ionization process is essentially an interband mechanism since the confined carriers within the well lie within the overlapping conduction and valence bands. As a result, the concentration of target carriers is virtually inexhaustible as in a conventional interband device.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.123280</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE journal of quantum electronics, 1992-02, Vol.28 (2), p.507-513 |
| issn | 0018-9197 1558-1713 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Carrier confinement Charge carrier processes Dark current Electrons Exact sciences and technology Impact ionization Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Photodetectors Physics Potential well Semiconductor device noise Semiconductor materials Superlattices |
| title | Theoretical study of a potential low-noise semimetal-based avalanche photodetector |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T07%3A59%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Theoretical%20study%20of%20a%20potential%20low-noise%20semimetal-based%20avalanche%20photodetector&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Yang%20Wang&rft.date=1992-02-01&rft.volume=28&rft.issue=2&rft.spage=507&rft.epage=513&rft.pages=507-513&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/3.123280&rft_dat=%3Cproquest_RIE%3E28649678%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25909375&rft_id=info:pmid/&rft_ieee_id=123280&rfr_iscdi=true |