Synchrotron radiation-assisted silicon film growth by irradiation parallel to the substrate

Growth of silicon films by synchrotron radiation (SR) photolysis of Si 2 H 6 is studied for temperatures below 500°C. SR is irradiated parallel to the substrate to grow silicon film over a large area and to avoid substrate heating and gas dissociation by photoelectrons. The thickness uniformity in a 2-inch wafer is over 50% while an SR cross section is about 1×10 mm. At substrate temperatures above 300°C, the hydrogen content of the film is low enough that epitaxial silicon film is successfully grown.