Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga(0.7)Al(0.3)As single quantum wells

Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga(0.7)Al(0.3)As single quantum wells

We have studied the temperature dependence of the linewidth, Gamma(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga(0.7)Al(0.3)As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton-longitudinal optical phonon int...

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Veröffentlicht in:Applied physics letters 1992-09, Vol.61 (12), p.1411-1413
Hauptverfasser: Qiang, H, POLLAK, FREDH, Torres, C M S, Leitch, W, Kean, A H, Stroscio, Michaela, IAFRATE, GERALDJ, Kim, K W
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Sprache:eng
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Zusammenfassung:We have studied the temperature dependence of the linewidth, Gamma(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga(0.7)Al(0.3)As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton-longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced. (Author)
ISSN:0003-6951