Space-charge region recombination in heterojunction bipolar transistors

A new comprehensive model for space-charge region (SCR) recombination current in abrupt and graded energy gap heterojunction bipolar transistors (HBTs) is derived. It is shown that if a spike is present in one of the bands at the heterojunction interface, the SCR recombination current becomes interr...

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Veröffentlicht in:	IEEE transactions on electron devices 1992-10, Vol.39 (10), p.2197-2205
Hauptverfasser:	Parikh, C.D., Lindholm, F.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Current density Electronics Engineering Engineering, Electrical & Electronic Exact sciences and technology Heterojunction bipolar transistors Integral equations Physical Sciences Physics Physics, Applied Predictive models Radiative recombination Science & Technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor materials Silicon Technology Thyristors Transistors
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Beschreibung
Zusammenfassung:	A new comprehensive model for space-charge region (SCR) recombination current in abrupt and graded energy gap heterojunction bipolar transistors (HBTs) is derived. It is shown that if a spike is present in one of the bands at the heterojunction interface, the SCR recombination current becomes interrelated with the collector current. A previously proposed charge control model for the HBT is modified to include the SCR recombination current. The model is used to study SCR recombination characteristics in HBTs.< >
ISSN:	0018-9383 1557-9646
DOI:	10.1109/16.158788