The structure of deep impurity states of II, III, IV group elements in IV–VI semiconductors

The structure of deep impurity states of II, III, IV group elements in IV–VI semiconductors

Arguments for a “6-p” model of deep impurity states of II, III, IV group elements in IV–VI semiconductors are presented. According to this model the “6-p” state of s-symmetry is split from the valence band and is a symmetric combination of six p-functions of anions surrounding impurity atom. Chemica...

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Veröffentlicht in:Solid state communications 1992, Vol.83 (3), p.217-222
1. Verfasser: Vinogradov, V.S.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Zusammenfassung:Arguments for a “6-p” model of deep impurity states of II, III, IV group elements in IV–VI semiconductors are presented. According to this model the “6-p” state of s-symmetry is split from the valence band and is a symmetric combination of six p-functions of anions surrounding impurity atom. Chemical trends in the behaviour of impurity levels are discussed. The reasons of spontaneous symmetry breaking of impurity state are analyzed.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(92)90840-6