SIMS profiling of AlSi interfaces in the presence of oxygen in the ion source or in the analysis chamber

Depth profiling of 200 Å Al thin films on Si substrates is performed experimentally using oxygen in the ion beam source or in the analysis chamber. These depth profiles are also obtained by dynamic Monte Carlo simulation. In addition to the simulation of the ballistic cascade development, the computer code also includes additional chemically guided atomic relocation mechanisms. The comparison between experiment and simulation on the one hand, and between the two profiling methods on the other yields information about the target modification induced by the use of reactive species.