Optical detection of the integer and fractional quantum hall effects in GaAs
Using band-gap photoluminescence, detection is achieved by a comprehensive study of the integer states from nu =1 to 10 and of the nu =2/3 hierarchy out of the 5/9 daughter states in an ultrahigh-mobility heterojunction at 120 mK.
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| Veröffentlicht in: | Physical review letters 1990-07, Vol.65 (5), p.637-640 |
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| container_end_page | 640 |
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| container_issue | 5 |
| container_start_page | 637 |
| container_title | Physical review letters |
| container_volume | 65 |
| creator | TURBERFIELD, A. J HAYNES, S. R WRIGHT, P. A FORD, R. A CLARK, R. G RYAN, J. F HARRIS, J. J FOXON, C. T |
| description | Using band-gap photoluminescence, detection is achieved by a comprehensive study of the integer states from nu =1 to 10 and of the nu =2/3 hierarchy out of the 5/9 daughter states in an ultrahigh-mobility heterojunction at 120 mK. |
| doi_str_mv | 10.1103/physrevlett.65.637 |
| format | Article |
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| fulltext | fulltext |
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| ispartof | Physical review letters, 1990-07, Vol.65 (5), p.637-640 |
| issn | 0031-9007 1079-7114 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25847319 |
| source | American Physical Society Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics |
| title | Optical detection of the integer and fractional quantum hall effects in GaAs |
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