$Optical detection of the integer and fractional quantum hall effects in GaAs$

Optical detection of the integer and fractional quantum hall effects in GaAs

Using band-gap photoluminescence, detection is achieved by a comprehensive study of the integer states from nu =1 to 10 and of the nu =2/3 hierarchy out of the 5/9 daughter states in an ultrahigh-mobility heterojunction at 120 mK.

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Bibliographische Detailangaben
Veröffentlicht in:	Physical review letters 1990-07, Vol.65 (5), p.637-640
Hauptverfasser:	TURBERFIELD, A. J, HAYNES, S. R, WRIGHT, P. A, FORD, R. A, CLARK, R. G, RYAN, J. F, HARRIS, J. J, FOXON, C. T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Using band-gap photoluminescence, detection is achieved by a comprehensive study of the integer states from nu =1 to 10 and of the nu =2/3 hierarchy out of the 5/9 daughter states in an ultrahigh-mobility heterojunction at 120 mK.
ISSN:	0031-9007 1079-7114
DOI:	10.1103/physrevlett.65.637