Distinct ultrafast carrier dynamics of α-In2Se3 and β-In2Se3: contributions from band filling and bandgap renormalization

As an intrigued layered 2D semiconductor material, indium selenide (In2Se3) has attracted widespread attention due to its excellent properties. So far, the carrier dynamics of α-In2Se3 and β-In2Se3 are still lacking a comprehensive understanding, which is essential to enhancing the performance of In...

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Veröffentlicht in:	Physical chemistry chemical physics : PCCP 2021-11, Vol.23 (42), p.24313-24318
Hauptverfasser:	Meng, Shengjie, Wang, Jian, Shi, Hongyan, Sun, Xiudong, Gao, Bo
Format:	Artikel
Sprache:	eng
Schlagworte:	Augers Carrier density Energy gap Fluence Indium selenides Optical properties Optoelectronic devices Reflectance Semiconductor materials
Online-Zugang:	Volltext
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